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 A Product Line of Diodes Incorporated
DXT458P5
NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR PowerDI(R)5
Features ADVANCE INFORMATION NEW PRODUCT
* * * * * * * 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm Rated up to 2.8W VCEO = 400V IC = 300mA; ICM = 1A Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2)
Mechanical Data
* * * * * Case: PowerDI 5 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.093 grams (approximate)
(R)
Applications
* * PSU start up switch Telecom switch
Top View
Bottom View
Device Schematic
Pin-out diagram
Ordering Information (Note 3)
Part Number DXT458P5-13
Notes:
Case (R) PowerDI 5
Packaging 5000/Tape & Reel
1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc's "Green" Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DXT458
YYWWK
DXT458 = Product Type Marking Code = Manufacturers' Code Marking K = Factory Designator YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 09 for 2009) WW = Week code (01 to 53)
PowerDI is a registered trademark of Diodes Incorporated. 1 of 7 DXT458P5
Document number: DS32067 Rev. 1 - 2
March 2010
(c) Diodes Incorporated
www.diodes.com
A Product Line of Diodes Incorporated
DXT458P5
Maximum Ratings ADVANCE INFORMATION NEW PRODUCT
@TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC IB ICM Value 400 400 5 300 200 1 Unit V V V mA mA A
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Peak Pulse Current
Thermal Characteristics
Characteristic Power Dissipation @ TA = 25C (Note 4) Thermal Resistance, Junction to Ambient Air (Note 4) @TA = 25C Power Dissipation @ TA = 25C (Note 5) Thermal Resistance, Junction to Ambient Air (Note 5) @TA = 25C Power Dissipation @ TA = 25C (Note 6) Thermal Resistance, Junction to Ambient Air (Note 6) @TA = 25C Thermal Resistance, Junction to Collector Terminal Operating and Storage Temperature Range
Notes:
Symbol PD RJA PD RJA PD RJA RJT TJ, TSTG
Value 2.8 45 1.3 96 0.7 179 14 -55 to +150
Unit W C/W W C/W W C/W C/W C
4. Device mounted on 1.6mm FR-4 PCB, single sided 2 oz. copper, collector pad dimensions 50mm x 50mm. 5. Device mounted on 1.6mm FR-4 PCB, single sided 1 oz. copper, collector pad dimensions 25mm x 25mm. 6. Device mounted on 1.6mm FR-4 PCB, single sided 1 oz. copper, minimum recommended pad layout.
PowerDI is a registered trademark of Diodes Incorporated. 2 of 7 DXT458P5
Document number: DS32067 Rev. 1 - 2
March 2010
(c) Diodes Incorporated
www.diodes.com
A Product Line of Diodes Incorporated
DXT458P5
ADVANCE INFORMATION NEW PRODUCT
3.0
IC Collector Current (A)
1
Max Power Dissipation (W)
see note 3
VCE(sat) Limited
2.5 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80
see note 3 see note 4 see note 5
100m
DC
1s 100ms
10m
Single Pulse Tamb=25C
10ms 1ms 100s
1m
1
10
100
100 120 140 160
VCE Collector-Emitter Voltage (V)
Temperature (C)
Safe Operating Area
100
Tamb=25C
Derating Curve
Thermal Resistance (C/W)
Maximum Power (W)
40 30 20 10
see note 3 D=0.5
Single Pulse Tamb=25C see note 3
10
D=0.2 Single Pulse D=0.05 D=0.1
0 100
1m
10m 100m
1
10
100
1k
1 100
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
PowerDI is a registered trademark of Diodes Incorporated. 3 of 7 DXT458P5
Document number: DS32067 Rev. 1 - 2
March 2010
(c) Diodes Incorporated
www.diodes.com
A Product Line of Diodes Incorporated
DXT458P5
ADVANCE INFORMATION NEW PRODUCT
Electrical Characteristics
@TA = 25C unless otherwise specified Symbol V(BR)CBO VCEO(sus) V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE fT Cobo ton toff Min 400 400 5 - - - - - - - 100 100 15 50 - - - Typ - - - - - - - - - - - - - - - 135 2260 Max - - - 100 100 100 200 500 900 900 - 300 - - 5 - - Unit V V V nA nA nA mV mV mV - MHz pF ns Test Condition IC = 100A IC = 10mA IE = 100A VCB = 320V VCB = 320V VEB = 4V IC = 20mA, IB = 2mA IC = 50mA, IB = 6mA IC = 50mA, IB = 5mA VCE = 10V, IC = 50mA VCE = 10V, IC = 1mA VCE = 10V, IC = 50mA VCE = 10V, IC = 100mA VCE = 20V, IC = 10mA, f = 20MHz VCB = 20V, f = 1MHz VCC = 100V, IC = 50mA, IB1 = 5mA, IB2 = 10mA
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 7) Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage (Note 7) Base-Emitter Saturation Voltage (Note 7) Base-Emitter Turn-On Voltage (Note 7) DC Current Gain (Note 7) Transition Frequency Output Capacitance Switching Times
Notes: 7. Pulse Test: Pulse width 300s. Duty cycle 2.0%.
PowerDI is a registered trademark of Diodes Incorporated. 4 of 7 DXT458P5
Document number: DS32067 Rev. 1 - 2
March 2010
(c) Diodes Incorporated
www.diodes.com
A Product Line of Diodes Incorporated
DXT458P5
Typical Characteristic
ADVANCE INFORMATION NEW PRODUCT
1
Tam b= C 25 IC/IB= 50
0.40 0.35 0.30
IC/IB= 20
VCE(SAT) (V)
VCE(SAT) (V)
0.25 0.20 0.15 0.10 0.05
100 C
100m
IC/IB= 10
25 C
IC/IB= 20
-55 C
10m 1m
IC Collector Current (A)
10m
100m
1m
IC Collector Current (A)
10m
100m
VCE(SAT) v IC
210 1.2
VCE = 10V 100 C
VCE(SAT) v IC
1.0
IC/IB= 20
180 150
Normalised Gain
1.0 0.8 0.6 0.4 0.2 0.0 1m 10m 100m
-55 C 25 C
Typical Gain (hFE)
0.8
120 90 60 30 0
VBE(SAT) (V)
-55 C 25 C 100 C
0.6
0.4 1m 10m 100m
IC Collector Current (A)
IC Collector Current (A)
h FE v IC
1.0
VCE = 10V
VBE(SAT) v IC
0.8
VBE(ON) (V)
-55 C
0.6
25 C
0.4 1m
100 C
IC Collector Current (A)
10m
100m
VBE(ON) v IC
PowerDI is a registered trademark of Diodes Incorporated. 5 of 7 DXT458P5
Document number: DS32067 Rev. 1 - 2
March 2010
(c) Diodes Incorporated
www.diodes.com
A Product Line of Diodes Incorporated
DXT458P5
Package Outline Dimensions ADVANCE INFORMATION NEW PRODUCT
A D b2 A2 D2
L
E
E1
E2
W L1 e b1 b1 A2
PowerDI 5 Dim Min Max A 1.05 1.15 A2 0.33 0.43 b1 0.80 0.99 b2 1.70 1.88 D 3.90 4.05 D2 3.054 Typ E 6.40 6.60 e 1.84 Typ E1 5.30 5.45 E2 3.549 Typ L 0.75 0.95 L1 0.50 0.65 W 1.10 1.41 All Dimensions in mm
(R)
Suggested Pad Layout
Z C
X2
E1 X1 Y1
Y2
Dimensions Z X1 X2 Y1 Y2 C E1
Value (in mm) 6.6 1.4 3.6 0.8 4.7 3.87 0.9
PowerDI is a registered trademark of Diodes Incorporated. 6 of 7 DXT458P5
Document number: DS32067 Rev. 1 - 2
March 2010
(c) Diodes Incorporated
www.diodes.com
A Product Line of Diodes Incorporated
DXT458P5
IMPORTANT NOTICE
ADVANCE INFORMATION NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2009, Diodes Incorporated www.diodes.com
PowerDI is a registered trademark of Diodes Incorporated. 7 of 7 DXT458P5
Document number: DS32067 Rev. 1 - 2
March 2010
(c) Diodes Incorporated
www.diodes.com


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